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| PRELIMINARY 2SK3679-01MR (900V/1.58/9A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range TO-220F 2) Absolute Maximum Ratings (Tc=25* Z * @ VDS ID ID(pulse) VGS IAR EAS dVDS/dt dV/dt PD*@*--s c=25*Z PD @Ta=25*Z Tch Tstg unless otherwise specified) Ratings 900 9 36 30 9 287.7 20 5 95 2.16 150 -55 * +150 Units V A A V A mJ *1 Symbols kV/us kV/us *2 W W This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 3)Electrical Characteristics (Tch=25*Z unless otherwise specified) min. 900 3.0 --------------------12 --typ. ------------1200 140 7 32 7 7 --1.0 max. --5.0 25 250 100 1.58 pF --------------1.5 Units V V E A E A nA Items Symbols Test Conditions BVDSS ID=250uA VGS=0V Drain-Source Breakdown Voltage ID=250uA VDS=VGS VGS(th) Gate Threshold Voltage VDS=900V Tch=25 Zero Gate Voltage Drain Current IDSS VGS=0V Tch=125 VGS=30V VDS=0V IGSS Gate-Source Leakage Current Drain-Source On-State Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge Avalanche Capability Diode Forward On-Voltage Ciss Coss Crss Qg Qgs Qgd IAV VSD ID=4.5A VGS=10V VDS=25V VGS=0V f=1MHz Vcc=450V ID=9A VGS=10V L=6.51mH Tch=25 IF=9A,VGS=0V,Tch=25*Z nC A V 4) Thermal Characteristics Items Channel to Case Channel to Ambient Symbols Rth(ch-c) Rth(ch-a) Test Conditions min. typ. max. 1.316 58.0 Units /W /W *1 L=6.51mH,Vcc=90V *2 I F-D,-di/dt=50A/ s,Vcc DSS,Tch150 DATE DRAWN REVISIONS MA4LE CHECKED NAME APPROVED DWG.NO. Fuji Electric Co.,Ltd. |
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